Techniques for storing accurate operating current values

ABSTRACT

A technique for storing accurate operating current values using programmable elements on memory devices. More specifically, programmable elements, such as antifuses, located on a memory device are programmed with measured operating current values corresponding to the memory device, during fabrication. The memory device may be incorporated into a memory module that is incorporated into a system. Once the memory module is incorporated into a system, the programmable elements may be accessed such that the system can be configured to optimally operate in accordance with the operating current values measured for each memory device in the system.

BACKGROUND OF THE INVENTION

1. Field Of The Invention

The present invention relates generally to memory sub-systems and, morespecifically, to a technique for storing accurate operating currentvalues using programmable elements on memory devices.

2. Description Of The Related Art

This section is intended to introduce the reader to various aspects ofart that may be related to various aspects of the present invention,which are described and/or claimed below. This discussion is believed tobe helpful in providing the reader with background information tofacilitate a better understanding of the various aspects of the presentinvention. Accordingly, it should be understood that these statementsare to be read in this light, and not as admissions of prior art.

In today's complex computer systems, speed, flexibility, and reliabilityin timing and control are issues typically considered by designengineers tasked with meeting customer requirements while implementinginnovations which are constantly being developed for computer systemsand their components. As system technology advances and processing anddata access speeds continue to increase, design engineers are faced witha variety of ever-changing design challenges.

Computer systems generally include one or more central processing units(CPUs), such as microprocessors, which generally control systemfunctions and facilitate the processing of system requests. The CPU(s)is coupled to the system memory which generally includes volatilememory, such as random access memory (RAM). The system memory may beimplemented to store programs and data which may be accessible to othersystem components, such as processors or peripheral devices, while thecomputer system is powered-on. Typically, the memory devices in thesystem memory are grouped together to form memory modules, such asdual-inline memory modules, where the memory devices are electricallycoupled together through one or more buses on the memory module.Computer systems may incorporate numerous memory modules to increase thestorage capacity of the system.

The computer system may also include a segment of non-volatile memory,such as read-only memory (ROM), which may store the basic input/outputsystem (BIOS). The system BIOS may be implemented to load the operatingsystem into the system memory, and to generally configure the system inaccordance with the current system resources and topology.

Typically, computer device manufacturers design system devices, such asprocessors and memory devices, to operate within a predeterminedtemperature range. If the temperature exceeds the predetermined range(i.e., the device becomes too hot), the device may not function properly(if at all), thereby potentially degrading the overall performance ofthe computer system. Accordingly, it is desirable for a computer systemand its components to operate within a thermally benign environment.

As can be appreciated, the electrical devices of the computer system,such as the processors and memory devices, draw electrical current toperform their intended functions. Typically, any electrical devicethrough which electrical current flows produces heat. The amount of heatthat any one device generates is generally a function of the amount ofcurrent flowing through the device. Typically, the faster an electricalcomponent is operating, the more heat that is produced by the component.Accordingly, with the increased processing speeds and data access ratesof today's computer systems, component heat production may become moreof a consideration in system designs. This may be particularly true formemory devices.

One technique for cooling memory devices may be referred to as “passive”cooling or system “throttling.” Throttling refers to reducing theoperating speed of a component so that less current flows through thecomponent such that the component produces less heat. Systems may beequipped with monitoring devices that are configured to monitor thetemperature of system components, such as memory devices. If a memorydevice exceeds a threshold temperature, the access rate to thatparticular memory device may be reduced, for instance.Disadvantageously, implementing thermal monitoring devices on eachsystem component may be difficult and expensive.

Accordingly, memory devices may be accompanied by data sheets thatinclude operating currents for the devices operating in various modesand over various environmental conditions. The operating currents(I_(DD)) provide general ranges that may be implemented to setthresholds in the system, such that the devices may be monitored toensure that they do not exceed the recommended operating currents. Ascan be appreciated, the operating currents may be correlated with theprocessing/access speed of the memory device. By setting thresholdsbased on operating currents provided in the data sheets, the system maybe configured to reduce the access rate, and thereby reduce theoperating current to mitigate the potential for the memory devicebecoming too hot.

Because data sheets are typically correlated with a particular type ofmemory chip, the operating currents provided on the data sheetsgenerally account for the worst case scenarios for a particular type ofmemory. That is to say that data sheets include operating currents thatare limited by those devices with the fastest failure rate. In practice,many of the memory devices can operate at currents of 15-40% outside ofthose provided on the data sheets. Accordingly, by configuring acomputer system to reduce access rates based on operating currentsprovided on the data sheets, the memory devices are not beingimplemented to the full extent of their capabilities.

The present invention may address one or more of the problems set forthabove.

BRIEF DESCRIPTION OF THE DRAWINGS

Advantages of the invention may become apparent upon reading thefollowing detailed description and upon reference to the drawings inwhich:

FIG. 1 illustrates a block diagram of an exemplary processor-baseddevice in accordance with embodiments of the present invention;

FIG. 2 illustrates an exemplary memory sub-system in accordance withembodiments of the present invention;

FIG. 3 illustrates an exemplary memory module in accordance withembodiments of the present invention;

FIG. 4 illustrates an exemplary volatile memory device in accordancewith embodiments of the present invention;

FIG. 5 is a flow chart illustrating exemplary methods for fabricatingmemory modules in accordance with embodiments of the present invention;and

FIG. 6 is a flow chart illustrating exemplary methods for configuring asystem incorporating memory modules fabricated in accordance withembodiments of the present invention.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

One or more specific embodiments of the present invention will bedescribed below. In an effort to provide a concise description of theseembodiments, not all features of an actual implementation are describedin the specification. It should be appreciated that in the developmentof any such actual implementation, as in any engineering or designproject, numerous implementation-specific decisions must be made toachieve the developers' specific goals, such as compliance withsystem-related and business-related constraints, which may vary from oneimplementation to another. Moreover, it should be appreciated that sucha development effort might be complex and time consuming, but wouldnevertheless be a routine undertaking of design, fabrication, andmanufacture for those of ordinary skill having the benefit of thisdisclosure.

Turning now to the drawings, and referring initially to FIG. 1, a blockdiagram depicting an exemplary processor-based system, generallydesignated by reference numeral 10, is illustrated. The system 10 may beany of a variety of types such as a computer, pager, cellular phone,personal organizer, control circuit, etc. In a typical processor-baseddevice, one or more processors 12, such as a microprocessor, controlsthe processing of system functions and requests in the system 10. Aswill be appreciated, the processor 12 may include an embedded North orSouth bridge, for coupling each of the aforementioned componentsthereto. Alternatively, the bridges (not shown) may include separatebridges coupled between the processor 12 and the various components ofthe system 10.

The system 10 typically includes a power supply 14. For instance, if thesystem 10 is a portable system, the power supply 14 may advantageouslyinclude permanent batteries, replaceable batteries, and/or rechargeablebatteries. The power supply 14 may also include an AC adapter, so thesystem 10 may be plugged into a wall outlet, for instance. The powersupply 14 may also include a DC adapter such that the system 10 may beplugged into a vehicle cigarette lighter, for instance. Various otherdevices may be coupled to the processor 12 depending on the functionsthat the system 10 performs. For instance, a user interface 16 may becoupled to the processor 12. The user interface 16 may include buttons,switches, a keyboard, a light pen, a mouse, and/or a voice recognitionsystem, for instance. A display 18 may also be coupled to the processor12. The display 18 may include an LCD display, a CRT, LEDs, and/or anaudio display, for example. Furthermore, an RF sub-system/basebandprocessor 20 may also be couple to the processor 12. The RFsub-system/baseband processor 20 may include an antenna that is coupledto an RF receiver and to an RF transmitter (not shown). One or morecommunication ports 22 may also be coupled to the processor 12. Thecommunications port 22 may be adapted to be coupled to one or moreperipheral devices 24 such as a modem, a printer, a computer, or to anetwork, such as a local area network, remote area network, intranet, orthe Internet, for instance.

Because the processor 12 generally controls the functioning of thesystem 10 by implementing software programs, the memory is operablycoupled to the processor 12 to store and facilitate execution of variousprograms. For instance, the processor 12 may be coupled to the volatilememory 26 which may include Dynamic Random Access Memory (DRAM) and/orStatic Random Access Memory (SRAM). The volatile memory 26 may include anumber of memory modules, as described further below. As can beappreciated, the volatile memory 26 may simply be referred to as the“system memory.” The volatile memory 26 is typically quite large so thatit can store dynamically loaded applications and data.

The processor 12 may also be coupled to non-volatile memory 28. Thenon-volatile memory 28 may include a read-only memory (ROM), such as anEPROM, and/or flash memory to be used in conjunction with the volatilememory. The size of the ROM is typically selected to be just largeenough to store any necessary operating system, application programs,and fixed data. Additionally, the non-volatile memory 28 may include ahigh capacity memory such as a tape or disk drive memory.

FIG. 2 generally illustrates a block diagram of a portion of a memorysub-system, such as the volatile memory 26. A memory controller 30 isgenerally provided to facilitate access to the storage devices in thesystem memory. While the present embodiment illustrates the memorycontroller 30 as existing in the memory sub-system, the memorycontroller 30 may be in the processor 12 or may exist in a discretechip, as can be appreciated by those skilled in the art. The memorycontroller 30 may receive requests to access the memory devices via oneor more processors, such as the processor 12, via peripheral devices,such as the peripheral device 24, and/or via other systems. The memorycontroller 30 is generally tasked with facilitating the execution of therequests to the memory devices and coordinating the exchange ofinformation, including configuration information, to and from the memorydevices.

The volatile memory 26 may include one or more connectors or slots32A-32H that are each configured to operably couple a respective memorymodule 34A-34H, such as a dual-inline memory module (DIMM), to thememory controller 30 via one or more memory buses. Each memory module34A-34H generally includes one or more memory devices such as dynamicrandom access memory (DRAM) devices capable of storing data. The memorybuses may include a data bus 36 to facilitate the exchange of databetween each memory device and the memory controller 30. The data bus 36may comprise a plurality of single bit data buses each coupled from thememory controller 30 to an individual memory device. In one exemplaryembodiment of the volatile memory 26, the memory data bus 36 may include64 individual data buses. In other words, the exemplary data bus 36 mayhave a width of 64 bits. In this exemplary embodiment, each of the eightmemory slots 32A-32H is capable of supporting a memory module 34comprising eight memory devices. Further, the data bus 36 may includeone or more individual buses to each memory slot 32A-32H which may beused for ECC error detection and correction. Further, one or more of thedevices on the memory modules 34A-34E may be implemented for parity datastorage. As can be appreciated by those skilled in the art, aspects ofthe data bus 36 will vary depending on the configuration andcapabilities of the system 10.

The volatile memory 26 may also include a command bus 38 on whichaddress information such as command address (CA), row address select(RAS), column address select (CAS), write enable (WE), bank address(BA), and chip select (CS), for example, may be delivered for acorresponding request. Further, the command bus 38 may also be used tofacilitate the exchange of configuration information at system boot. Aswith the data bus 36, the command bus 38 may comprise a plurality ofindividual command buses. In the present exemplary embodiment, thecommand bus may include 20 individual buses. Accordingly, the presentexemplary command bus may have a width of 20 bits. As previouslyexplained with reference to the data bus 36, a variety of embodimentsmay be implemented for the command bus 38 depending on the systemconfiguration.

FIG. 3 illustrates an exemplary memory module 34, such as a DIMM, thatmay be inserted in one of the memory slots 32A-32H. The memory module 34may include an edge connector 40 to facilitate mechanical coupling ofthe memory module 34 into a memory slot 32A-32H. Further, the edgeconnector 40 provides a mechanism for facilitating the exchange of dataand control signals from the memory controller 30 to devices on thememory module 34. The memory module 34 may include a plurality ofvolatile memory devices 42A-42H, such as dynamic random access devices(DRAMs), which may be used for storing information. Alternatively,rather than an edge connector 40, the memory module 34 may includeanother type of contact means, such as a connector generally located inan area of the memory module 34 other than edge (e.g., center).

Each memory module 34 may also include a non-volatile memory device 44to store information corresponding to the respective memory module 34and memory devices 42A-42H on the memory module 34, such as device size,speed, operating voltages and timing parameters, for instance. Thenon-volatile memory device 44 on each memory module 34 may be accessedby the system BIOS at system boot to properly configure the system tofit the particular performance profiles of the memory devices 42A-42H onthe corresponding memory module 34. One such non-volatile memory device44 is a serial presence detect (SPD). An SPD device is typically aneight-pin, non-volatile, read only, serial chip which stores informationabout the memory module 34 including, but not limited to, the modulesize, speed, voltage, drive strength, and the number of row and columnaddresses. At system boot, the Basic Input/Output System (BIOS) readsthe parameters stored on the SPD and automatically configures the systemchipset to maximize reliability and system performance. If timingparameters are not adjusted during the system boot, the system 10 mayproduce more errors and/or operate at non-optimal speeds.

In accordance with one exemplary embodiment, each memory device 42A-42Hincludes a plurality of programmable units 46A-46H, respectively. Eachof the plurality of programmable units 46A-46H may comprise anon-volatile storage device such as an antifuse, for example. As can beappreciated, antifuses are non-volatile memory elements that function asopen circuits until they are programmed. When programmed, an antifusecreates a short circuit or low resistance link. Antifuses may, forexample, be used to implement redundancy rows and columns in a memorydevice or as a mechanism for changing an operating mode. Antifuses mayalso be programmed to encode information. In the present exemplaryembodiment, the plurality of programmable units 46A-46H, such asantifuses, may be implemented to store operating currentparameters/values for a respective memory device 42A-42H to optimizesystem performance, as described further below. Alternatively, fuses maybe implemented to store the operating current parameters/values.

After fabrication, memory devices, such as the memory devices 42A-42Hare generally tested and characterized such that the memory devices42A-42H are defined to operate optimally within particular ranges forparticular instructions and over a specified range of conditions. Onesuch test parameter is operating current. As previously described,operating current parameters or values are generally provided on datasheets, such that a system may be configured to operate within theoperating current parameters. Operating current parameters may beprovided for a number of conditions. As can be appreciated, theoperating current parameters may be derived from testing a number ofmemory devices over a range of operating conditions (e.g., speeds,temperatures, etc.). As previously described, the faster the memorydevice is accessed, the higher the operating current and the more likelythat the functionality of the memory device may fail due to the hightemperature of the memory device caused by the high operating speeds.Accordingly, operating current parameters can function as guidelines foroptimizing the functionality of the memory device 42A-42H, and a system10 may be configured to operate such that the maximum operating currentparameters are not exceeded during operation of the system 10.

Generally speaking, operating current parameters are provided for aparticular type of memory device, such as a static random access memory(SDRAM) device or a double data rate synchronous dynamic random accessmemory (DDR SDRAM) device, for example. To ensure that a large majorityof the memory devices 42A-42H function properly within the ascribedoperating currents, the operating current parameters provided on thedata sheets provide worst-case current values. While this may ensurethat the majority of the memory devices 42A-42H will function properly(i.e., will not exceed recommended operating temperatures), it does notensure that the memory devices 42A-42H are operating optimally, becausethe operating current parameters are generally set in accordance withthe memory devices 42A-42H having the lowest acceptable testperformance. By providing device specific operating current values witheach memory module 34, system performance may be optimized in accordancewith the particular memory devices 42A-42H being implemented, asdescribed further below.

Turning now to FIG. 4, a block diagram of an exemplary memory device 42is illustrated. The memory device 42 includes a plurality ofprogrammable elements 48, collectively illustrated and referenced by thereference numeral 46. For clarity, references to the programmable units46 or 46A-46H, generally refer to a bank or plurality of individualprogrammable elements 48. That is to say that each programmable unit 46or 46A-46H generally comprises a plurality of individual programmableelements 48. Each of the programmable elements 48 may be a non-volatilestorage device, such as an antifuse, for example. The programmableelements 48 may be implemented to encode each memory device 42 withoperating current (I_(DD)) values correlative to the optimizedfunctionality of the particular memory device 42. Accordingly, eachmemory device 42 that may be incorporated into a memory module 34 (FIG.3) includes device-specific operating currents which may be used toconfigure a system 10 (FIG. 1), as described further below.

Referring now to FIG. 5, exemplary methods for fabricating a memorymodule 34 in accordance with embodiments of the present invention areillustrated. During manufacturing of the memory devices 42A-42H orduring the manufacturing of the memory modules 34, the operating current(I_(DD)) values for each of the memory devices 42A-42H may be measured,as indicated in block 50. As previously described, operating currentparameters are generally provided for a memory type, rather than foreach specific memory device 42A-42H. In one exemplary embodiment, theoperating current values measured for each specific memory device42A-42H may be implemented to better optimize performance of the system10, as described further below.

After measuring the operating current values, the operating currentvalues corresponding to a each respective memory device 42A-42H arestored in the programmable elements 48 on the respective memory device42A-42H, as indicated in block 50. Accordingly, each memory device42A-42H includes a plurality of programmable elements 48 which have beenprogrammed to store the measured operating current values associatedwith the corresponding memory device 42A-42H. After storing theoperating current values on the corresponding memory device 42A-42H, thememory devices 42A-42H are assembled to form a memory module 34, asindicated in block 54. Advantageously, after incorporating the memorymodule 34 into a system 10 (FIG. 1), the memory devices 42A-42H may beaccessed such that the operating current parameters stored on theprogrammable elements 48 may be implemented to optimize performance ofthe system 10, as described further below with respect to FIG. 6.

As previously described, each memory module 34 may also include anon-volatile memory device 44, such as an SPD which may be implementedto store information corresponding to the respective memory module 34and memory devices 42A-42H on the memory module 34, such as device size,speed, operating voltages and timing parameters, for instance. In oneexemplary embodiment, the non-volatile memory device 44 may also beimplemented to store the measured operating current values for each ofthe memory devices 42A-42H on the memory module 34. Accordingly, in oneexemplary embodiment, after assembly of the memory module 34, theoperating current values may be read from the programmable elements 48,as indicated in block 56 of FIG. 5. The non-volatile memory device 44may be programmed to store the operating current values read from eachof the programmable elements 48, such that the non-volatile memorydevice 44 includes the operating currents for each of the memory devices42A-42H on the memory module 34, as indicated in block 58.Advantageously, because systems, such as the system 10 (FIG. 1), aregenerally configured to access the non-volatile memory device 44 toconfigure the system 10 in accordance with the device parameters of thememory module 34, the inclusion of the operating current values on thenon-volatile memory device 44 may be easily incorporated intoconfiguration of the system 10.

As can be appreciated, the order of the acts described with reference toFIG. 5 is meant by way of example and for purposes of illustration only.Accordingly, the acts may be performed in an order that differs from theorder illustrated in the exemplary flow chart.

FIG. 6 illustrates exemplary methods for configuring a systemincorporating memory modules fabricated in accordance with embodimentsof the present invention. As can be appreciated, the exemplaryconfiguration techniques may be used in a system 10 that implementsmemory modules 34 having memory devices 42A-42H with programmableelements 48 implemented for storing operating current values for thememory devices 42A-42H. Further, as described above with reference toFIG. 5, a non-volatile memory device 44, such as an SPD, may also beimplemented to store the operating current values corresponding to thememory devices 42A-42H. To configure the system 10 for optimizedutilization of the memory devices 42A-42H, the operating current valuesare read from the non-volatile memory device 44, or directly from theprogrammable elements 48 on each memory device 42A-42H, as indicated inblock 60 of FIG. 6. In one exemplary embodiment, the operating currentvalues are read by the BIOS during system boot.

Once the operating current values are read from the non-volatile memorydevice 44 or the programmable elements 48, the system 10 can beconfigured to operate in accordance with the operating current values,as indicated in block 62. That is to say that configuration registers inthe system 10 may be set based on the operating current limitations forthe particular memory devices 42A-42H being implemented in the system10. For instance, in one embodiment, the operating current values readfrom the non-volatile memory device 44 or the programmable elements 48may be used to set operating current thresholds for the system 10, asindicated in block 64. By setting operating current thresholds in thesystem 10 based on the operating current values stored on thenon-volatile memory device 44 or the programmable elements 48, accessrates to memory devices 42A-42H can generally be increased. Aspreviously described, once operating currents reach the thresholds,access rates may be reduced to insure that the memory device 42A-42Hdoes not overheat by drawing too much current. If the thresholds are setusing the worst-case values provided on the data sheets, access ratesmay be prematurely reduced. That is to say that if the worst-caseoperating currents are implemented to establish thresholds forthrottling a memory devices 42A-42H or the memory module 34, performancecapabilities may be wasted if the specific memory devices 42A-42H in thesystem 10 can operate accurately at operating currents above theworst-case values provided on the data sheets.

Once the operating current thresholds are set in the system 10 using thevalues stored on the non-volatile memory device 44 or the programmableelements 48, the actual operating current of each memory device 42A-42Hmay be monitored internally by the system 10, as indicated in block 66.During processing, the monitored operating currents may be compared tothe thresholds set using the operating current values stored in thenon-volatile memory device 44 or the programmable elements 48, asindicated in block 68. In one embodiment, the monitored currents may becontinuously compared to the thresholds. In another embodiment, themonitored currents may be compared to the thresholds periodically, basedon a number of clock cycles, for instance. As can be appreciated, if themonitored operating current crosses the threshold, the access rate tothe corresponding memory device 42A-42H or memory module 34 can bereduced (i.e., the system 10 may be throttled). By implementing thepresent techniques, the operability of the memory devices 42A-42H may beoptimized, thereby improving the overall performance of the system 10.

While the present exemplary embodiments illustrate the advantages ofmeasuring and storing device specific operating current values in theprogrammable elements 48, other parameters, such as voltage or timingparameters, may also be measured on a particular memory device 42A-42Hand advantageously stored in the programmable elements 48. As describedabove with regard to the operating currents, any parameters for aspecific memory device 42A-42H may be measured and stored in theprogrammable elements 48 from later use, such as for programming thenon-volatile memory device 44 (block 56). These parameters may be usedto set thresholds and otherwise optimize performance of the memorydevice 42A-42H and the system 10 in general.

While the invention may be susceptible to various modifications andalternative forms, specific embodiments have been shown by way ofexample in the drawings and have been described in detail herein.However, it should be understood that the invention is not intended tobe limited to the particular forms disclosed. Rather, the invention isto cover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention as defined by the followingappended claims.

1. A method of manufacturing a memory device comprising: measuringoperating current values in each of a plurality of memory devices; andstoring the respective operating current values for each of therespective plurality of memory devices in a plurality of programmableelements on each of the respective plurality of memory devices.
 2. Themethod, as set forth in claim 1, comprising coupling each of theplurality of memory devices to a substrate to form a memory module. 3.The method, as set forth in claim 2, wherein coupling comprisingcoupling each of the plurality of memory devices to a substrate to forma dual inline memory module.
 4. The method, as set forth in claim 1,wherein measuring comprises measuring the operating current values ineach of a plurality of random access memory devices.
 5. The method, asset forth in claim 1, wherein storing the respective operating currentvalues in the plurality of programmable elements on each of thecorresponding plurality of memory devices comprises storing therespective operating current values in a plurality of antifuses on eachof the corresponding plurality of memory devices.
 6. A method ofoperating a memory module comprising a memory device coupled to asubstrate, comprising: providing a memory device comprising a pluralityof programmable elements having operating current values stored therein;reading the operating current values from the plurality of programmableelements on the memory device; and storing the operating current valueson a non-volatile memory device, wherein the non-volatile memory deviceis coupled to the substrate.
 7. The method, as set forth in claim 6,wherein storing the operating current values on the non-volatile memorydevice comprises storing the operating current value on a serialpresence detect device.
 8. A method of configuring a memory, comprising:reading respective operating current values from a plurality ofprogrammable elements located on each of a plurality of respectivememory devices, wherein the operating current values correspond to arespective one of the plurality of memory devices, and wherein theplurality of memory devices are configured to form a memory module; andconfiguring a system in accordance with the operating current valuesfrom the programmable elements.
 9. The method, as set forth in claim 8,wherein reading comprises reading operating current values from aplurality of antifuses located on each of a plurality of memory devices.10. The method, as set forth in claim 8, wherein reading comprisesreading operating current values from a plurality of programmableelements located on each of a plurality of random access memory devices.11. The method, as set forth in claim 8, wherein reading comprisesreading operating current values from a plurality of programmableelements located on each of a plurality of random access memory devices,wherein the plurality of memory devices are configured to form a dualinline memory module.
 12. The method, as set forth in claim 8, whereinreading comprises reading the operating current values from theplurality of programmable elements during a boot of the system.
 13. Themethod, as set forth in claim 8, wherein configuring comprises settingoperating current thresholds in the system in accordance with theoperating current values.
 14. The method, as set forth in claim 13,comprising throttling the memory module if an actual operating currentin the memory module exceeds the operating current thresholds duringoperation of the system.
 15. A method of configuring a system, themethod comprising: providing a plurality of memory devices in whichrespective operating current values have been stored in a plurality ofprogrammable elements located on each of a plurality of respectivememory devices on a memory module, wherein the operating current valuescomprise measured operating currents corresponding to the respectivememory device; copying the operating current values from the pluralityof programmable elements on each of the plurality of memory devices to anon-volatile memory device on the memory module; reading operatingcurrent values from the non-volatile memory device on the memory module;and configuring a system in accordance with the operating current valuesfrom the non-volatile memory device.
 16. The method, as set forth inclaim 15, wherein providing comprises providing a plurality of memorydevices in which operating current values have been stored in aplurality of antifuses located on each of a plurality of memory devices.17. The method, as set forth in claim 15, wherein providing comprisesproviding a plurality of memory devices in which operating currentvalues have been stored in a plurality of programmable elements locatedon each of a plurality of random access memory devices.
 18. The method,as set forth in claim 15, wherein providing comprises providing aplurality of memory devices in which operating current values have beenstored in a plurality of programmable elements located on each of aplurality of memory devices of a dual inline memory module.
 19. Themethod, as set forth in claim 15, wherein reading comprises reading theoperating current values from the non-volatile memory device during aboot of the system.
 20. The method, as set forth in claim 15, whereinconfiguring comprises setting operating current thresholds in the systemin accordance with the operating current values.
 21. The method, as setforth in claim 20, comprising throttling the memory module if an actualoperating current in the memory module exceeds the operating currentthresholds during operation of the system.
 22. A memory modulecomprising: a substrate; and a plurality of memory devices coupled tothe substrate, wherein each of the plurality of memory devices comprisesa respective plurality of programmable elements and wherein a respectiveoperating current value for each of the plurality of memory devices arestored in the respective plurality of programmable elements.
 23. Thememory module, as set forth in claim 22, comprising a non-volatilememory device coupled to the substrate, wherein a respective operatingcurrent value for each of the plurality of memory devices are stored inthe non-volatile memory device.
 24. The memory module, as set forth inclaim 23, wherein the non-volatile memory device comprises a serialpresence detect device.
 25. The memory module, as set forth in claim 22,wherein the memory module comprises a dual inline memory module.
 26. Thememory module, as set forth in claim 22, wherein each of the pluralityof memory devices comprises a dynamic random access memory device. 27.The memory module, as set forth in claim 22, wherein each of theplurality of programmable elements comprises an antifuse.
 28. A systemcomprising: a processor; and a memory module coupled to the processorand comprising: a substrate; and a plurality of memory devices coupledto the substrate, wherein each of the plurality of memory devicescomprises a respective plurality of programmable elements and wherein arespective operating current value for each of the plurality of memorydevices are stored in the respective plurality of programmable elements.29. The system, as set forth in claim 28, comprising a non-volatilememory device coupled to the substrate, wherein a respective operatingcurrent value for each of the plurality of memory devices are stored inthe non-volatile memory device.
 30. The system, as set forth in claim29, wherein the non-volatile memory device comprises a serial presencedetect device.
 31. The system, as set forth in claim 28, wherein thememory module comprises a dual inline memory module.
 32. The system, asset forth in claim 28, wherein each of the plurality of memory devicescomprises a dynamic random access memory device.
 33. The system, as setforth in claim 28, wherein each of the plurality of programmableelements comprises an antifuse.